BFP740FH6327XTSA1 Биполярный транзистор NPN 4,0В 45мА 160мВт Кус 160-400 45ГГц

Нормоупаковка 3000. Описание RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4V; Transition Frequency ft:45GHz; Power Dissipation Pd:160mW; DC Collector Current:45mA; DC Current Gain hFE:250hFE; RF Transistor Case:TSF.